226 0

Communication-Selective Adsorption of PEG on SiO2 for High Removal Selectivity in Tungsten CMP

Title
Communication-Selective Adsorption of PEG on SiO2 for High Removal Selectivity in Tungsten CMP
Author
송태섭
Keywords
PLANARIZATION; DEFECT
Issue Date
2018-03
Publisher
ELECTROCHEMICAL SOC INC
Citation
ECS JOURNAL OF SOLID STATE SCIENCE AND TECHNOLOGY, v. 7, no. 3, page. P132-P134
Abstract
We studied the effect of selective adsorption of polyethylene glycol (PEG) on SiO2 for high removal selectivity of tungsten to SiO2 in tungsten CMP. The hydrogen bonding between PEG and SiO2 increased as the solution pH decreased. At pH 3, the maximum adsorption of PEG on SiO2 occurred due to the low surface charge of SiO2 (near its isoelectric point). The selective adsorption led to the selective reduction of removal rate of SiO2 during CMP process. As a result, the removal selectivity increased from 4.5 to 85.5 as the PEG concentration increased from 0 to 9 wt% at pH 3. (C) 2018 The Electrochemical Society.
URI
http://jss.ecsdl.org/content/7/3/P132https://repository.hanyang.ac.kr/handle/20.500.11754/117964
ISSN
2162-8769
DOI
10.1149/2.0251803jss
Appears in Collections:
COLLEGE OF ENGINEERING[S](공과대학) > ENERGY ENGINEERING(에너지공학과) > Articles
Files in This Item:
There are no files associated with this item.
Export
RIS (EndNote)
XLS (Excel)
XML


qrcode

Items in DSpace are protected by copyright, with all rights reserved, unless otherwise indicated.

BROWSE