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A study on the thermoelectric properties of ALD-grown aluminum-doped tin oxide with respect to nanostructure modulations

Title
A study on the thermoelectric properties of ALD-grown aluminum-doped tin oxide with respect to nanostructure modulations
Author
박진성
Keywords
Aluminum doped tin oxide; Atomic layer deposition; Thermoelectric material; Seebeck; Power factor
Issue Date
2018-02
Publisher
ELSEVIER SCI LTD
Citation
CERAMICS INTERNATIONAL, v. 44, no. 2, page. 1978-1983
Abstract
The thermoelectric properties of aluminum-doped tin oxide (ATO) thin films synthesized by thermal atomic layer deposition (ALD) were studied with respect to the aluminum concentration. The overall aluminum content in each layer was modulated by adjusting the relative number of tin oxide (SnO2) and aluminum oxide (Al2O3) growth cycles, where a sequential process involving n cycles of SnO2 growth followed by 1 cycle of Al2O3 deposition was performed (building up a super-cycle). The electrical conductivity (620 S/cm), free carrier concentration (1.23x10(21) cm(-3)), and power factor (0.49 mW/K(2)m) increase until their maximum values are reached when the Al content is approximately 1.50 at% of the cations, and decrease as more Al is added in. On the other hand, the Seebeck coefficient decreases monotonically as the Al content increases up to about 2.88 at %, and begins to increase with further Al doping. Here the thermoelectric efficiency is therefore determined primarily by the free carrier concentration, while the Seebeck coefficient appears to be influenced by the overall crystal structure.
URI
https://www.sciencedirect.com/science/article/pii/S0272884217323453?via%3Dihubhttp://repository.hanyang.ac.kr/handle/20.500.11754/117549
ISSN
0272-8842; 1873-3956
DOI
10.1016/j.ceramint.2017.10.141
Appears in Collections:
COLLEGE OF ENGINEERING[S](공과대학) > MATERIALS SCIENCE AND ENGINEERING(신소재공학부) > Articles
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