Full metadata record
DC Field | Value | Language |
---|---|---|
dc.contributor.author | 전형탁 | - |
dc.date.accessioned | 2019-12-04T05:15:21Z | - |
dc.date.available | 2019-12-04T05:15:21Z | - |
dc.date.issued | 2018-01 | - |
dc.identifier.citation | THIN SOLID FILMS, v. 645, page. 334-339 | en_US |
dc.identifier.issn | 0040-6090 | - |
dc.identifier.uri | https://www.sciencedirect.com/science/article/pii/S0040609017308076?via%3Dihub | - |
dc.identifier.uri | https://repository.hanyang.ac.kr/handle/20.500.11754/117186 | - |
dc.description.abstract | The deposition of SiOC thin films via remote plasma atomic layer deposition was investigated. Octamethylcyclotetrasiloxane (OMCTS) and O-2, Ar, H-2 plasmas were respectively used as a precursor and reactants during the deposition process at 400 degrees C. Plasma and deposition temperatures had a significant effect on the physical and electrical characteristics of the films. When Ar and H-2 plasma was respectively used during the deposition process, films exhibited low dielectric constants while incorporating carbon; however, O-2 plasma yielded carbon free SiO2 films. Low dielectric constants resulted in low film densities and the presence of carbon within the films. When Ar and H-2 plasma was used as the reactant gas, pores within the films with loose structures and SieC bonds served to lower the dielectric constant. As a result, Ar and H-2 plasma conditions exhibited low dielectric constants of 2.7 and 3.1 at 100 degrees C, respectively. Meanwhile, the presence of carbon and low film densities caused leakage paths within the films. X-ray photoelectron spectroscopy supported analyses demonstrating the bonding characteristics of Si, C, O components. | en_US |
dc.description.sponsorship | This study was supported by a National Research Foundation of Korea (NRF) grant funded by the Korean Government (MEST) (Grant No. NRF-2015R1A2A1A10052324). | en_US |
dc.language.iso | en_US | en_US |
dc.publisher | ELSEVIER SCIENCE SA | en_US |
dc.subject | Octamethylcyclotetrasiloxane | en_US |
dc.subject | Atomic layer deposition | en_US |
dc.subject | Low-dielectric constant | en_US |
dc.subject | Silicon oxycarbide | en_US |
dc.subject | Thin film | en_US |
dc.title | Characteristics of low-kappa SiOC films deposited via atomic layer deposition | en_US |
dc.type | Article | en_US |
dc.relation.volume | 645 | - |
dc.identifier.doi | 10.1016/j.tsf.2017.10.045 | - |
dc.relation.page | 334-339 | - |
dc.relation.journal | THIN SOLID FILMS | - |
dc.contributor.googleauthor | Lee, Jaemin | - |
dc.contributor.googleauthor | Jang, Woochool | - |
dc.contributor.googleauthor | Kim, Hyunjung | - |
dc.contributor.googleauthor | Shin, Seokyoon | - |
dc.contributor.googleauthor | Kweon, Youngkyun | - |
dc.contributor.googleauthor | Lee, Kunyoung | - |
dc.contributor.googleauthor | Jeon, Hyeongtag | - |
dc.relation.code | 2018003110 | - |
dc.sector.campus | S | - |
dc.sector.daehak | COLLEGE OF ENGINEERING[S] | - |
dc.sector.department | DIVISION OF MATERIALS SCIENCE AND ENGINEERING | - |
dc.identifier.pid | hjeon | - |
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