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Effects of Stacked Mo-Ti/Cu Source and Drain Electrodes on the Performance of Amorphous In-Ga-Zn-O Thin-Film Transistors

Title
Effects of Stacked Mo-Ti/Cu Source and Drain Electrodes on the Performance of Amorphous In-Ga-Zn-O Thin-Film Transistors
Author
권오경
Keywords
Amorphous In-Ga-Zn-O; stacked electrode; thin-film transistor; trap states
Issue Date
2018-01
Publisher
IEEE-INST ELECTRICAL ELECTRONICS ENGINEERS INC
Citation
IEEE ELECTRON DEVICE LETTERS, v. 39, no. 1, page. 43-46
Abstract
In this letter, the performance of amorphous In-Ga-Zn-O (a-IGZO) thin-film transistors (TFTs) is investigated using the stacked Mo-Ti/Cu source (S) and drain (D) electrodes. The test samples A and B of the a-IGZO TFT have interlayers with Mo/Ti ratios of 2.29 and 1.15, respectively, for the SD electrodes, and each has a core layer of Cu stacked on the top of the interlayers. They were fabricated and measured to compare their performance in terms of the transfer characteristic and mobility. The measurement results showed that the sample B with a lower Mo/Ti ratio exhibited better performance than the sample A: higher field-effect mobility by 4.4 cm(2)/V-s, higher saturation mobility by 3.2 cm(2)/V-s, smaller sub-threshold slope by 0.91 V/decade, and lower threshold voltageby 1.4V. In addition, the material properties of samples A and B were obtained using the line scan of the energy dispersive spectroscopy and analyzed with technology computer-aided design simulation. As a result, the performance of a-IGZO TFTs can be optimized by tuning the Mo/Ti ratios of the interlayer in the stacked SD electrodes.
URI
https://ieeexplore.ieee.org/document/8094877http://repository.hanyang.ac.kr/handle/20.500.11754/117173
ISSN
0741-3106; 1558-0563
DOI
10.1109/LED.2017.2769669
Appears in Collections:
COLLEGE OF ENGINEERING[S](공과대학) > ELECTRONIC ENGINEERING(융합전자공학부) > Articles
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