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Nanoscale CuO solid-electrolyte-based conductive-bridging, random-access memory cell with a TiN liner

Title
Nanoscale CuO solid-electrolyte-based conductive-bridging, random-access memory cell with a TiN liner
Author
박재근
Keywords
Conductive-bridge; Random access memory; Nanoscale device; TiN liner; Diffusion barrier; Endurance
Issue Date
2018-01
Publisher
KOREAN PHYSICAL SOC
Citation
JOURNAL OF THE KOREAN PHYSICAL SOCIETY, v. 72, no. 1, page. 116-121
Abstract
The Conductive-bridge random-access memory (CBRAM) cell is a promising candidate for a terabit-level non-volatile memory due to its remarkable advantages. We present for the first time TiN as a diffusion barrier in CBRAM cells for enhancing their reliability. CuO solid-electrolyte-based CBRAM cells implemented with a 0.1-nm TiN liner demonstrated better non-volatile memory characteristics such as similar to 10(6) AC write/erase endurance cycles with 100-mu s AC pulse width and a long retention time of similar to 7.4-years at 85 A degrees C. In addition, the analysis of Ag diffusion in the CBRAM cell suggests that the morphology of the Ag filaments in the electrolyte can be effectively controlled by tuning the thickness of the TiN liner. These promising results pave the way for faster commercialization of terabit-level non-volatile memories.
URI
https://link.springer.com/article/10.3938%2Fjkps.72.116http://repository.hanyang.ac.kr/handle/20.500.11754/117121
ISSN
0374-4884; 1976-8524
DOI
10.3938/jkps.72.116
Appears in Collections:
COLLEGE OF ENGINEERING[S](공과대학) > ELECTRONIC ENGINEERING(융합전자공학부) > Articles
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