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dc.contributor.author김정현-
dc.date.accessioned2019-12-04T02:45:14Z-
dc.date.available2019-12-04T02:45:14Z-
dc.date.issued2019-06-
dc.identifier.citationIEEE MICROWAVE AND WIRELESS COMPONENTS LETTERS, v. 29, No. 6, Page. 400-402en_US
dc.identifier.issn1531-1309-
dc.identifier.issn1558-1764-
dc.identifier.urihttps://ieeexplore.ieee.org/document/8708925-
dc.identifier.urihttp://repository.hanyang.ac.kr/handle/20.500.11754/117106-
dc.description.abstractA novel backward distributed frequency doubler is proposed showing a high output power level without buffer amplifiers. The position of the output port is reversed compared to a conventional distributed structure, and the lengths of the transmission lines are optimized to effectively multiply the frequency and remove the fundamental-frequency signal (f0) without additional circuits such as a balun. Thanks to no need of buffer amplifiers at the final stage of the doubler, the proposed circuit was implemented using a low cost, 0.15-µm GaAs pHEMT process. The measured results show a peak conversion gain and saturated output power of −4.3 dB and 7.1 dBm, respectively, with a 12.3% fractional 3-dB bandwidth. The proposed frequency doubler exhibits a fundamental-frequency rejection of −23 dB at 96 GHz with a moderate chip size of 1.0 × 2.0 mm2.en_US
dc.description.sponsorshipThis work was supported in part by the National Research Foundation of Korea funded by the Ministry of Education through the Basic Science Research Program under Grant 2016R1D1A1A09919288 and in part by the Human Resource Program in Energy Technology of the Korea Institute of Energy Technology Evaluation and Planning from the Ministry of Trade, Industry and Energy, South Korea, under Grant 20154030200730.en_US
dc.language.isoen_USen_US
dc.publisherIEEE-INST ELECTRICAL ELECTRONICS ENGINEERS INCen_US
dc.subjectFrequency multiplieren_US
dc.subjectmillimeter waveen_US
dc.subjectpseudomorphic high electron transistor (pHEMT)en_US
dc.subjectW-banden_US
dc.titleW-Band Backward Distributed Frequency Doubler Using GaAs 0.15-mu m pHEMT Processen_US
dc.typeArticleen_US
dc.relation.no6-
dc.relation.volume29-
dc.identifier.doi10.1109/LMWC.2019.2913307-
dc.relation.page400-402-
dc.relation.journalIEEE MICROWAVE AND WIRELESS COMPONENTS LETTERS-
dc.contributor.googleauthorKim, M.-
dc.contributor.googleauthorChoi, K.-
dc.contributor.googleauthorKim, J.-
dc.relation.code2019001128-
dc.sector.campusE-
dc.sector.daehakCOLLEGE OF ENGINEERING SCIENCES[E]-
dc.sector.departmentDIVISION OF ELECTRICAL ENGINEERING-
dc.identifier.pidjunhkim-
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COLLEGE OF ENGINEERING SCIENCES[E](공학대학) > ELECTRICAL ENGINEERING(전자공학부) > Articles
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