18 0

W-Band Backward Distributed Frequency Doubler Using GaAs 0.15-mu m pHEMT Process

Title
W-Band Backward Distributed Frequency Doubler Using GaAs 0.15-mu m pHEMT Process
Author
김정현
Keywords
Frequency multiplier; millimeter wave; pseudomorphic high electron transistor (pHEMT); W-band
Issue Date
2019-06
Publisher
IEEE-INST ELECTRICAL ELECTRONICS ENGINEERS INC
Citation
IEEE MICROWAVE AND WIRELESS COMPONENTS LETTERS, v. 29, No. 6, Page. 400-402
Abstract
A novel backward distributed frequency doubler is proposed showing a high output power level without buffer amplifiers. The position of the output port is reversed compared to a conventional distributed structure, and the lengths of the transmission lines are optimized to effectively multiply the frequency and remove the fundamental-frequency signal (f0) without additional circuits such as a balun. Thanks to no need of buffer amplifiers at the final stage of the doubler, the proposed circuit was implemented using a low cost, 0.15-µm GaAs pHEMT process. The measured results show a peak conversion gain and saturated output power of −4.3 dB and 7.1 dBm, respectively, with a 12.3% fractional 3-dB bandwidth. The proposed frequency doubler exhibits a fundamental-frequency rejection of −23 dB at 96 GHz with a moderate chip size of 1.0 × 2.0 mm2.
URI
https://ieeexplore.ieee.org/document/8708925http://repository.hanyang.ac.kr/handle/20.500.11754/117106
ISSN
1531-1309; 1558-1764
DOI
10.1109/LMWC.2019.2913307
Appears in Collections:
COLLEGE OF ENGINEERING SCIENCES[E](공학대학) > ELECTRICAL ENGINEERING(전자공학부) > Articles
Files in This Item:
There are no files associated with this item.
Export
RIS (EndNote)
XLS (Excel)
XML


qrcode

Items in DSpace are protected by copyright, with all rights reserved, unless otherwise indicated.

BROWSE