W-Band Backward Distributed Frequency Doubler Using GaAs 0.15-mu m pHEMT Process
- W-Band Backward Distributed Frequency Doubler Using GaAs 0.15-mu m pHEMT Process
- Frequency multiplier; millimeter wave; pseudomorphic high electron transistor (pHEMT); W-band
- Issue Date
- IEEE-INST ELECTRICAL ELECTRONICS ENGINEERS INC
- IEEE MICROWAVE AND WIRELESS COMPONENTS LETTERS, v. 29, No. 6, Page. 400-402
- A novel backward distributed frequency doubler is proposed showing a high output power level without buffer amplifiers. The position of the output port is reversed compared to a conventional distributed structure, and the lengths of the transmission lines are optimized to effectively multiply the frequency and remove the fundamental-frequency signal (f0) without additional circuits such as a balun. Thanks to no need of buffer amplifiers at the final stage of the doubler, the proposed circuit was implemented using a low cost, 0.15-µm GaAs pHEMT process. The measured results show a peak conversion gain and
saturated output power of −4.3 dB and 7.1 dBm, respectively, with a 12.3% fractional 3-dB bandwidth. The proposed frequency doubler exhibits a fundamental-frequency rejection of −23 dB at 96 GHz with a moderate chip size of 1.0 × 2.0 mm2.
- 1531-1309; 1558-1764
- Appears in Collections:
- COLLEGE OF ENGINEERING SCIENCES[E](공학대학) > ELECTRICAL ENGINEERING(전자공학부) > Articles
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