206 0

Photothermally Activated Nanocrystalline Oxynitride with Superior Performance in Flexible Field-Effect Transistors

Title
Photothermally Activated Nanocrystalline Oxynitride with Superior Performance in Flexible Field-Effect Transistors
Author
박진성
Keywords
zinc-oxynitride; photochemical reaction; low-temperature process; thin-film transistors; flexible electronics
Issue Date
2018-01
Publisher
AMER CHEMICAL SOC
Citation
ACS APPLIED MATERIALS & INTERFACES, v. 10, no. 3, page. 2709-2715
Abstract
Photochemical reactions in inorganic films, which can, be promoted by the addition, of thermal energy, enable significant changes in the properties of films. Metaphase films depend significantly on introducing external energy even at low temperatures.: We performed thermal-induced, deep ultraviolet, based, thermal-photochemical activation of metaphase ZnOxNy films at low temperature, and we observed peculiar-variations, in the nanostructures with phase transformation and densification. The separated; Zn3N2 and ZnO nanocrystalline lattice in amorphous ZnOxNy was-stabilized remarkably by the-reduction Of oxygen defects and IT;the interfacial atomic rearrangement without breaking the N-bonding. On the basis of these approaches, we successfully demonstrated highly flexible, nanocrystalline-ZnOxNy thin-film transistors on polyethylene naphthalate films, and the saturation mobility showed more than 60 cm(2) V-1 s(-1).
URI
https://pubs.acs.org/doi/10.1021/acsami.7b16046https://repository.hanyang.ac.kr/handle/20.500.11754/116985
ISSN
1944-8244; 1944-8252
DOI
10.1021/acsami.7b16046
Appears in Collections:
COLLEGE OF ENGINEERING[S](공과대학) > MATERIALS SCIENCE AND ENGINEERING(신소재공학부) > Articles
Files in This Item:
There are no files associated with this item.
Export
RIS (EndNote)
XLS (Excel)
XML


qrcode

Items in DSpace are protected by copyright, with all rights reserved, unless otherwise indicated.

BROWSE