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Enhanced Bonding by Applied Current in Cu-to-Cu Joints Fabricated Using 20 mu m Cu Microbumps

Title
Enhanced Bonding by Applied Current in Cu-to-Cu Joints Fabricated Using 20 mu m Cu Microbumps
Author
김영호
Keywords
Cu-to-Cu direct bonding; current-assisted bonding; Cu microbumps; electromigration
Issue Date
2017-12
Publisher
ASME
Citation
JOURNAL OF ELECTRONIC PACKAGING, v. 139, no. 4, Article no. 041004
Abstract
The effect of applied current in enhancing bonding was studied in Cu-to-Cu direct bonding using Cu microbumps. A daisy-chain structure of electroplated Cu microbumps (20 mu m x 20 mu m) was fabricated on Si wafer. Cu-to-Cu bonding was performed in ambient atmosphere at 200-300 degrees C for 10 min under 260 MPa, during which direct current of 0-10 A (2.5 x 10(6) A/cm(2)) was applied. With increasing applied current, the contact resistance decreased and the shear strength in the Cu-to-Cu joints increased. The enhanced bonding imparted by the application of current was ascribed to Joule heating and electromigration effects. Subsequently, the joint temperature was calibrated to isolate the electromigration effects for study. In Cu-to-Cu joints joined at the same adjusted temperature, increasing the current caused unbonded regions to decrease and regions of cohesive failure to increase. The enhanced diffusion across the Cu/Cu interfaces under the applied current was the main mechanism whereby the quality of the Cu-to-Cu joints was improved.
URI
http://electronicpackaging.asmedigitalcollection.asme.org/article.aspx?articleid=2647595http://repository.hanyang.ac.kr/handle/20.500.11754/116653
ISSN
1043-7398; 1528-9044
DOI
10.1115/1.4037474
Appears in Collections:
COLLEGE OF ENGINEERING[S](공과대학) > MATERIALS SCIENCE AND ENGINEERING(신소재공학부) > Articles
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