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Highly-impermeable Al2O3/HfO2 moisture barrier films grown by lowtemperature plasma-enhanced atomic layer deposition

Title
Highly-impermeable Al2O3/HfO2 moisture barrier films grown by lowtemperature plasma-enhanced atomic layer deposition
Author
장재영
Keywords
Al2O3; HfO2; Mixed oxide film; Plasma-enhanced atomic layer deposition (PEALD); Thin-film encapsulation (TFE)
Issue Date
2017-11
Publisher
ELSEVIER SCIENCE BV
Citation
ORGANIC ELECTRONICS, v. 50, page. 296-303
Abstract
Polymer substrates are essential components of flexible electronic applications such as OTFTs, OPVs, and OLEDs. However, high water vapor permeability of polymer films can significantly reduce the lifetime of flexible electronic devices. In this study, we examined the water vapor permeation barrier properties of Al2O3/HfO2 mixed oxide films on polymer substrates. Al2O3/HfO2 films deposited by plasma-enhanced atomic layer deposition were transparent, chemically stable in water and densely amorphous. At 60 degrees C and 90% relative humidity (RH) accelerated condition, 50-nm-thick Al2O3/HfO2 had water vapor transmission rate (WVTR) = 1.44 x 10(-4) g m(-2) d(-1). whereas single layers of Al2O3 had WVTR -3.26 x 10(-4)gm(-2) d(-1) and of HfO2 had WVTR -6.75 x 10(-2)gm(-2) d(-1). At 25 degrees C and 40% RH, 50nm-thick Al2O3/HfO2 film had WVTR -2.63 x 10(-6) g m(-2) d(-1), which is comparable to WVTR of conventional glass encapsulation. (C) 2017 Elsevier B.V. All rights reserved.
URI
https://www.sciencedirect.com/science/article/pii/S156611991730383X?via%3Dihubhttp://repository.hanyang.ac.kr/handle/20.500.11754/116100
ISSN
1566-1199; 1878-5530
DOI
10.1016/j.orgel.2017.07.051
Appears in Collections:
COLLEGE OF ENGINEERING[S](공과대학) > ENERGY ENGINEERING(에너지공학과) > Articles
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