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Review of recent advances in flexible oxide semiconductor thin-film transistors

Title
Review of recent advances in flexible oxide semiconductor thin-film transistors
Author
박진성
Keywords
Flexible display; thin-film transistor; oxide semiconductor; mechanical stress; atomic layer deposition
Issue Date
2017-10
Publisher
TAYLOR & FRANCIS LTD
Citation
JOURNAL OF INFORMATION DISPLAY, v. 18, no. 4, page. 159-172
Abstract
This paper describes the recent advances in flexible oxide thin-film transistors (TFTs), one of the rapidly emerging technologies for the next-generation display applications. First, the paper focuses on the effect of the buffer layer over the plastic substrate, which significantly influences the electrical performance and stability of oxide TFTs. Then oxide semiconductor TFTs fabricated through atomic layer deposition among the various oxide semiconductor fabrication methods were reviewed due to their potential as high-performance flexible TFTs. Finally, the mechanical fatigue behaviors of the TFTs were investigated, including the various mechanical factors, such as the bending radius, cycles, and stress directions. Structural solutions for the TFT were also introduced, such as TFT design modification and the use of the neutral plane concept, to improve the mechanical durability.
URI
https://www.tandfonline.com/doi/full/10.1080/15980316.2017.1385544http://repository.hanyang.ac.kr/handle/20.500.11754/115837
ISSN
1598-0316; 2158-1606
DOI
10.1080/15980316.2017.1385544
Appears in Collections:
COLLEGE OF ENGINEERING[S](공과대학) > MATERIALS SCIENCE AND ENGINEERING(신소재공학부) > Articles
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