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Dynamic Logic Circuits Using a-IGZO TFTs

Title
Dynamic Logic Circuits Using a-IGZO TFTs
Author
박진성
Keywords
Amorphous indium-gallium-zinc-oxide thin-film transistor (a-IGZO TFT); dynamic logic; logic circuit; TFTs
Issue Date
2017-08
Publisher
IEEE-INST ELECTRICAL ELECTRONICS ENGINEERS INC
Citation
IEEE TRANSACTIONS ON ELECTRON DEVICES, v. 64, no. 10, page. 4123-4130
Abstract
Previously reported thin-film transistor (TFT) digital logic gates are mostly static circuits. If the static logic circuits are implemented using either nMOS or pMOS technologies alone, unlike CMOS technologies, the circuits consume high power because of the steady-state current, and take large circuit area. In this paper, the dynamic logic circuits using n-type a-IGZO TFTs are proposed to resolve the power and circuit area issues. The dynamic logic circuits such as inverters and nand gates are fabricated in an amorphous indium-gallium-zinc-oxide TFT technology, and traditional static logic circuits are also implemented with the same technology for comparison purposes. The measurement results show that the proposed dynamic logic circuit consumes no steady-state current, and the circuit area is reduced by 93.1%.
URI
https://ieeexplore.ieee.org/document/8012542http://repository.hanyang.ac.kr/handle/20.500.11754/115173
ISSN
0018-9383; 1557-9646
DOI
10.1109/TED.2017.2738665
Appears in Collections:
COLLEGE OF ENGINEERING[S](공과대학) > MATERIALS SCIENCE AND ENGINEERING(신소재공학부) > Articles
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