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dc.contributor.author이승백-
dc.date.accessioned2019-11-29T05:27:47Z-
dc.date.available2019-11-29T05:27:47Z-
dc.date.issued2017-08-
dc.identifier.citationNANOTECHNOLOGY, v. 28, no. 37, Article no. 37LT01en_US
dc.identifier.issn0957-4484-
dc.identifier.issn1361-6528-
dc.identifier.urihttps://iopscience.iop.org/article/10.1088/1361-6528/aa8335-
dc.identifier.urihttp://repository.hanyang.ac.kr/handle/20.500.11754/115163-
dc.description.abstractThe ambipolar band structure of graphene presents unique opportunities for novel electronic device applications. A cycle of gate voltage sweep in a conventional graphene transistor produces a frequency-doubled output current. To increase the frequency further, we used various graphene doping control techniques to produce Dirac voltage engineered graphene channels. The various surface treatments and substrate conditions produced differently doped graphene channels that were integrated on a single substrate and multiple Dirac voltages were observed by applying a single gate voltage sweep. We applied the Dirac voltage engineering techniques to graphene field-effect transistors on a single chip for the fabrication of a frequency multiplier and a logic inverter demonstrating analog and digital circuit application possibilities.en_US
dc.description.sponsorshipThis work was supported by the Basic Science Research Program through the National Research Foundation (NRF) funded by in the Ministry of Education (NRF-2012R1A6A1029029, NRF-2016R1D1A1B03934731), by Nano Material Technology Development Program (NRF-2012M3A7B4035198, NRF-2014M3A7B4049369) in NRF funded by the Ministry of Education of Korea.en_US
dc.language.isoen_USen_US
dc.publisherIOP PUBLISHING LTDen_US
dc.subjectgrapheneen_US
dc.subjecttransistoren_US
dc.subjectthermal annealen_US
dc.subjectboron nitrideen_US
dc.subjectphotoresisten_US
dc.titleSelective Dirac voltage engineering of individual graphene field-effect transistors for digital inverter and frequency multiplier integrationsen_US
dc.typeArticleen_US
dc.relation.volume28-
dc.identifier.doi10.1088/1361-6528/aa8335-
dc.relation.page3701-3706-
dc.relation.journalNANOTECHNOLOGY-
dc.contributor.googleauthorSul, Onejae-
dc.contributor.googleauthorKim, Kyumin-
dc.contributor.googleauthorJung, Yungwoo-
dc.contributor.googleauthorChoi, Eunsuk-
dc.contributor.googleauthorLee, Seung-Beck-
dc.relation.code2017001039-
dc.sector.campusS-
dc.sector.daehakCOLLEGE OF ENGINEERING[S]-
dc.sector.departmentDEPARTMENT OF ELECTRONIC ENGINEERING-
dc.identifier.pidsbl22-
Appears in Collections:
COLLEGE OF ENGINEERING[S](공과대학) > ELECTRONIC ENGINEERING(융합전자공학부) > Articles
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