Full metadata record
DC Field | Value | Language |
---|---|---|
dc.contributor.author | 이승백 | - |
dc.date.accessioned | 2019-11-29T05:27:47Z | - |
dc.date.available | 2019-11-29T05:27:47Z | - |
dc.date.issued | 2017-08 | - |
dc.identifier.citation | NANOTECHNOLOGY, v. 28, no. 37, Article no. 37LT01 | en_US |
dc.identifier.issn | 0957-4484 | - |
dc.identifier.issn | 1361-6528 | - |
dc.identifier.uri | https://iopscience.iop.org/article/10.1088/1361-6528/aa8335 | - |
dc.identifier.uri | https://repository.hanyang.ac.kr/handle/20.500.11754/115163 | - |
dc.description.abstract | The ambipolar band structure of graphene presents unique opportunities for novel electronic device applications. A cycle of gate voltage sweep in a conventional graphene transistor produces a frequency-doubled output current. To increase the frequency further, we used various graphene doping control techniques to produce Dirac voltage engineered graphene channels. The various surface treatments and substrate conditions produced differently doped graphene channels that were integrated on a single substrate and multiple Dirac voltages were observed by applying a single gate voltage sweep. We applied the Dirac voltage engineering techniques to graphene field-effect transistors on a single chip for the fabrication of a frequency multiplier and a logic inverter demonstrating analog and digital circuit application possibilities. | en_US |
dc.description.sponsorship | This work was supported by the Basic Science Research Program through the National Research Foundation (NRF) funded by in the Ministry of Education (NRF-2012R1A6A1029029, NRF-2016R1D1A1B03934731), by Nano Material Technology Development Program (NRF-2012M3A7B4035198, NRF-2014M3A7B4049369) in NRF funded by the Ministry of Education of Korea. | en_US |
dc.language.iso | en_US | en_US |
dc.publisher | IOP PUBLISHING LTD | en_US |
dc.subject | graphene | en_US |
dc.subject | transistor | en_US |
dc.subject | thermal anneal | en_US |
dc.subject | boron nitride | en_US |
dc.subject | photoresist | en_US |
dc.title | Selective Dirac voltage engineering of individual graphene field-effect transistors for digital inverter and frequency multiplier integrations | en_US |
dc.type | Article | en_US |
dc.relation.volume | 28 | - |
dc.identifier.doi | 10.1088/1361-6528/aa8335 | - |
dc.relation.page | 3701-3706 | - |
dc.relation.journal | NANOTECHNOLOGY | - |
dc.contributor.googleauthor | Sul, Onejae | - |
dc.contributor.googleauthor | Kim, Kyumin | - |
dc.contributor.googleauthor | Jung, Yungwoo | - |
dc.contributor.googleauthor | Choi, Eunsuk | - |
dc.contributor.googleauthor | Lee, Seung-Beck | - |
dc.relation.code | 2017001039 | - |
dc.sector.campus | S | - |
dc.sector.daehak | COLLEGE OF ENGINEERING[S] | - |
dc.sector.department | DEPARTMENT OF ELECTRONIC ENGINEERING | - |
dc.identifier.pid | sbl22 | - |
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