GaSb/InGaAs 2-dimensional hole gas grown on InP substrate for III-V CMOS applications
- Title
- GaSb/InGaAs 2-dimensional hole gas grown on InP substrate for III-V CMOS applications
- Author
- 송윤흡
- Keywords
- 2DHG; GaSb; Hole mobility; Lattice mismatch; III-V CMOS
- Issue Date
- 2017-07
- Publisher
- ELSEVIER SCIENCE BV
- Citation
- CURRENT APPLIED PHYSICS, v. 17, no. 7, page. 1005-1008
- Abstract
- We grew a two-dimensional hole gas (2DHG) system using a GaSb quantum well layer sandwiched by InGaAs layers in Molecular Beam Epitaxy (MBE). The 2DHG quantum well was achieved using a spreading modulation doping method with Be-dopant. The cross-sectional STEM image clearly shows that large dislocations by lattice-mismatch are relaxed in all layers. We confirmed substantial valence and conduction band offsets in the 2DHG by simulated results. The electrical properties were also observed by Hall measurement, indicating a high hole mobility of 653 cm(2)/Vs and high carrier concentration of 4.3 x 10(12)/cm(2) at RT. (C) 2017 Published by Elsevier B. V.
- URI
- https://www.sciencedirect.com/science/article/pii/S1567173917300937?via%3Dihubhttps://repository.hanyang.ac.kr/handle/20.500.11754/114974
- ISSN
- 1567-1739; 1878-1675
- DOI
- 10.1016/j.cap.2017.03.018
- Appears in Collections:
- COLLEGE OF ENGINEERING[S](공과대학) > ELECTRONIC ENGINEERING(융합전자공학부) > Articles
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