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A Driving Method of Pixel Circuit Using a-IGZO TFT for Suppression of Threshold Voltage Shift in AMLED Displays

Title
A Driving Method of Pixel Circuit Using a-IGZO TFT for Suppression of Threshold Voltage Shift in AMLED Displays
Author
권오경
Keywords
mu LED; compensation; AMLED; a-IGZO TFT; stretched exponential model; V-th shift suppression
Issue Date
2017-06
Publisher
IEEE-INST ELECTRICAL ELECTRONICS ENGINEERS INC
Citation
IEEE ELECTRON DEVICE LETTERS, v. 38, no. 6, page. 760-762
Abstract
A driving method of pixel circuit using amorphous indium gallium zinc oxide (a-IGZO) thin-film transistor (TFT) is proposed to improve the image quality of active matrix light-emitting diode displays. The proposed pixel circuit employs a diode-connected structure to compensate for variation in threshold voltage (V-th) of the a-IGZO TFT. In addition, the proposed driving method adopts negative bias annealing to suppress the V-th shift. The annealing time is optimized based on the experimental observation of the minimum V-th shift. After a stress time of 30 000 s, the measurement results showthat the (Vth) shift is reducedby 29.6%, using an optimized annealing time of 5% of one frame time. In addition, the maximum deviation in the emission current using the proposed driving method wasmeasured to be less than 4.32% after a stress time of 30 000 s.
URI
https://ieeexplore.ieee.org/document/7914633http://repository.hanyang.ac.kr/handle/20.500.11754/114534
ISSN
0741-3106; 1558-0563
DOI
10.1109/LED.2017.2699669
Appears in Collections:
COLLEGE OF ENGINEERING[S](공과대학) > ELECTRONIC ENGINEERING(융합전자공학부) > Articles
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