Effect of Frost Formation on Operation of GaN Ultraviolet Photodetectors at Low Temperatures
- Title
- Effect of Frost Formation on Operation of GaN Ultraviolet Photodetectors at Low Temperatures
- Author
- 소홍윤
- Keywords
- Gallium nitride; photodetector; low-temperature environments; ultraviolet; frost formation
- Issue Date
- 2017-06
- Publisher
- IEEE-INST ELECTRICAL ELECTRONICS ENGINEERS INC
- Citation
- IEEE SENSORS JOURNAL, v. 17, no. 15, page. 4752-4756
- Abstract
- Effects of frost growth on the sensitivity of gallium nitride (GaN) photodetectors were investigated by characterizing electrical and optical properties under dark and 365-nm ultraviolet (UV) illumination from room temperature down to -100 degrees C. The direct wire bonding architecture was used to create aluminum/GaN interdigitated devices for the microfabrication. As the operation temperature decreased below -5 degrees C, the frost formed from humid air was observed on the GaN surface, and photo-to-dark current ratio (sensitivity factor) showed significant reduction (6.76 at room temperature and 2.73 at -100 degrees C under 1 V-bias). The presence of frost on the device surface significantly reduced the absorption of incident UV light into the GaN surfaces (average 85.6% reduction from room temperature to -70 degrees C). This paper supports the characterization of the GaN for UV detection within low-temperature environments, such as cryostats, Arctic research, and space exploration applications.
- URI
- https://ieeexplore.ieee.org/document/7939963https://repository.hanyang.ac.kr/handle/20.500.11754/114513
- ISSN
- 1530-437X; 1558-1748
- DOI
- 10.1109/JSEN.2017.2712639
- Appears in Collections:
- COLLEGE OF ENGINEERING[S](공과대학) > MECHANICAL ENGINEERING(기계공학부) > Articles
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