Investigation of the barrier properties of copper-vanadium alloys with a sub-tantalum layer on low-k dielectrics
- Title
- Investigation of the barrier properties of copper-vanadium alloys with a sub-tantalum layer on low-k dielectrics
- Author
- 전형탁
- Keywords
- Cu interconnect; Diffusion barrier; Cu-V alloy; Ta; Low-k dielectric
- Issue Date
- 2017-06
- Publisher
- ELSEVIER SCIENCE SA
- Citation
- JOURNAL OF ALLOYS AND COMPOUNDS, v. 722, page. 259-264
- Abstract
- In this study, we investigated the effects of a sub-Ta layer on the self-forming barrier process of a Cu-V alloy on low-k dielectrics. To determine how the sub-Ta layer affects the V-based self-forming barrier performance, Cu-V/low-k and Cu-V/Ta/low-k samples were compared using various analysis methods. The thickness, chemical composition, and reliability performance of the V-based interlayer with or without the sub-Ta layer were determined by transmission electron microscopy (TEM), X-ray photoemission spectroscopy (XPS), and thermal stability analysis, respectively. Although the sub-Ta layer adversely affected the decrease of the sheet resistance of the Cu alloy and the formation of a V-based interlayer, the experimental results revealed that the Cu-V/Ta/low-k samples exhibited good reliability and barrier properties, indicating that these properties for a Cu-V barrier layer can be enhanced by introducing a thin Ta sub-layer. XPS analysis showed that the sub-Ta layer affects the formation of a V oxide layer not only by blocking the diffusion of V atoms, but also due to the formation of Ta oxide. In the case of a V-based interlayer with a sub-Ta layer, both Ta2O5 and V2O5 compounds were formed on the low-k layer. Furthermore, according to the leakage current results, although the introduction of the sub-Ta layer improved the reliability and thermal stability of the self-forming barrier process, the Cu-V/Ta/low-k/Si structures demonstrated increased current densities under the 550 degrees C thermal stress condition. This indicates that the Cu-V alloy with the sub-Ta layer needs to be further investigated to improve the thermal stability. (C) 2017 Elsevier B.V. All rights reserved.
- URI
- https://www.sciencedirect.com/science/article/abs/pii/S0925838817320911?via%3Dihubhttps://repository.hanyang.ac.kr/handle/20.500.11754/114500
- ISSN
- 0925-8388; 1873-4669
- DOI
- 10.1016/j.jallcom.2017.06.103
- Appears in Collections:
- COLLEGE OF ENGINEERING[S](공과대학) > MATERIALS SCIENCE AND ENGINEERING(신소재공학부) > Articles
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