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dc.contributor.author고광철-
dc.date.accessioned2019-11-25T05:41:20Z-
dc.date.available2019-11-25T05:41:20Z-
dc.date.issued2017-05-
dc.identifier.citationIEEE TRANSACTIONS ON PLASMA SCIENCE, v. 45, no. 5, page. 798-804en_US
dc.identifier.issn0093-3813-
dc.identifier.issn1939-9375-
dc.identifier.urihttps://ieeexplore.ieee.org/document/7921658-
dc.identifier.urihttps://repository.hanyang.ac.kr/handle/20.500.11754/114126-
dc.description.abstractThe RF front-end is a very vulnerable part of the coupling paths that are induced by a high power electromagnetic (HPEM) pulse. Existing studies found through experiment or simulation that low-noise amplifiers (LNAs) often break down or are damaged, which causes the malfunction of the RF front-end. To protect the RF front-end, the damage process of LNAs based on theory is required in detail. This paper summarizes the damage process, and a new library is developed describing the damage phenomenon of LNAs by using user-defined elements. The model can be combined with other circuit models, and can also offer variation of the internal parameters of LNAs by HPEM pulse. Existing physical protection methods have high costs and complexity, and it is difficult to provide perfect protection. Thus, the proposed model can contribute to protection studies utilizing a circuit model.en_US
dc.description.sponsorshipThis work was supported by the Research Fund of Survivability Technology Defense Research Center of Agency for Defense Development of Korea under Grant UD150013ID. (Corresponding Author: Kwang-Cheol Ko.)en_US
dc.language.isoen_USen_US
dc.publisherIEEE-INST ELECTRICAL ELECTRONICS ENGINEERS INCen_US
dc.subjectBipolar transistor amplifiersen_US
dc.subjectelectromagnetic couplingen_US
dc.subjectlow-noise amplifier (LNA)en_US
dc.subjectprogrammable circuiten_US
dc.subjectsemiconductor device breakdownen_US
dc.titleDamage Modeling of a Low-Noise Amplifier in an RF Front-End Induced by a High Power Electromagnetic Pulseen_US
dc.typeArticleen_US
dc.relation.no5-
dc.relation.volume45-
dc.identifier.doi10.1109/TPS.2017.2684196-
dc.relation.page798-804-
dc.relation.journalIEEE TRANSACTIONS ON PLASMA SCIENCE-
dc.contributor.googleauthorBaek, Ji-Eun-
dc.contributor.googleauthorCho, Young-Maan-
dc.contributor.googleauthorKo, Kwang-Cheol-
dc.relation.code2017000952-
dc.sector.campusS-
dc.sector.daehakCOLLEGE OF ENGINEERING[S]-
dc.sector.departmentDIVISION OF ELECTRICAL AND BIOMEDICAL ENGINEERING-
dc.identifier.pidkwang-
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COLLEGE OF ENGINEERING[S](공과대학) > ELECTRICAL AND BIOMEDICAL ENGINEERING(전기·생체공학부) > Articles
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