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Damage Modeling of a Low-Noise Amplifier in an RF Front-End Induced by a High Power Electromagnetic Pulse

Title
Damage Modeling of a Low-Noise Amplifier in an RF Front-End Induced by a High Power Electromagnetic Pulse
Author
고광철
Keywords
Bipolar transistor amplifiers; electromagnetic coupling; low-noise amplifier (LNA); programmable circuit; semiconductor device breakdown
Issue Date
2017-05
Publisher
IEEE-INST ELECTRICAL ELECTRONICS ENGINEERS INC
Citation
IEEE TRANSACTIONS ON PLASMA SCIENCE, v. 45, no. 5, page. 798-804
Abstract
The RF front-end is a very vulnerable part of the coupling paths that are induced by a high power electromagnetic (HPEM) pulse. Existing studies found through experiment or simulation that low-noise amplifiers (LNAs) often break down or are damaged, which causes the malfunction of the RF front-end. To protect the RF front-end, the damage process of LNAs based on theory is required in detail. This paper summarizes the damage process, and a new library is developed describing the damage phenomenon of LNAs by using user-defined elements. The model can be combined with other circuit models, and can also offer variation of the internal parameters of LNAs by HPEM pulse. Existing physical protection methods have high costs and complexity, and it is difficult to provide perfect protection. Thus, the proposed model can contribute to protection studies utilizing a circuit model.
URI
https://ieeexplore.ieee.org/document/7921658http://repository.hanyang.ac.kr/handle/20.500.11754/114126
ISSN
0093-3813; 1939-9375
DOI
10.1109/TPS.2017.2684196
Appears in Collections:
COLLEGE OF ENGINEERING[S](공과대학) > ELECTRICAL AND BIOMEDICAL ENGINEERING(전기·생체공학부) > Articles
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