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Silicon oxide film deposited at room temperatures using high-working pressure plasma-enhanced chemical vapor deposition: Effect of O-2 flow rate

Title
Silicon oxide film deposited at room temperatures using high-working pressure plasma-enhanced chemical vapor deposition: Effect of O-2 flow rate
Author
박진성
Keywords
Silicon oxide; High working pressure plasma-enhanced chemical vapor deposition; Thin films; Water permeation property
Issue Date
2017-09
Publisher
ELSEVIER SCI LTD
Citation
CERAMICS INTERNATIONAL, v. 43, no. 13, page. 10628-10631
Abstract
Silicon oxide films were deposited by high-worldng-pressure plasma-enhanced chemical vapor deposition using hexamethyldisiloxane and O-2/He plasma as the precursor and the reactant, respectively. As the O-2 flow rate increased during the process, the plasma density of O-2 and He decreased due to reduction in the partial pressure of He, which affected the composition of O/Si in the silicon oxide films. Consequently, we found out that the compositional ratio of SiO2/SiO could be modulated by O-2 flow conditions during the high-working-pressure plasma-enhanced chemical vapor deposition process. Additionally, it was observed that the water vapor transmission rate reduced with an increase in the O-2 flow rate because of a compositional change in the silicon oxide films.
URI
https://www.sciencedirect.com/science/article/pii/S0272884217308994?via%3Dihubhttp://repository.hanyang.ac.kr/handle/20.500.11754/114047
ISSN
0272-8842; 1873-3956
DOI
10.1016/j.ceramint.2017.05.095
Appears in Collections:
COLLEGE OF ENGINEERING[S](공과대학) > MATERIALS SCIENCE AND ENGINEERING(신소재공학부) > Articles
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