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dc.contributor.author장재영-
dc.date.accessioned2019-11-24T17:03:12Z-
dc.date.available2019-11-24T17:03:12Z-
dc.date.issued2017-04-
dc.identifier.citationACS APPLIED MATERIALS & INTERFACES, v. 9, no. 13, page. 11759-11769en_US
dc.identifier.issn1944-8244-
dc.identifier.urihttps://pubs.acs.org/doi/10.1021/acsami.7b02365-
dc.identifier.urihttp://repository.hanyang.ac.kr/handle/20.500.11754/113754-
dc.description.abstractOptical memories based on photoresponsive organic fieldeffect transistors (OFETs) are of great interest due to their unique applications, such as multibit storage memories and flexible imaging Circuits. Most studies of OFET-type memories have focused on the photoresponsive active channels, but more useful functions can be additionally given to the devices by using floating gates that can absorb light. In this case, effects of photoirradiation on photoactive floating-gate layers need to be fully understood. Herein, we studied the photoinduced erasing effects of floating-gate interlayers on the electrical responses of OFET-type memories and considered the possible mechanisms. Polymer/C-60 composites were inserted between pento.cene and SiO2 to form photoresponsive floating -gate interlayers in transistor memory. When exposed to light, C-60 generated excitons, and these photo excited carriers contributed to the elimination of trapped charge carriers, which resulted in the recovery of OFET performance. Such memory devices exhibited bistable current states controlled With voltage driven programming and light-driven erasure. Furthermore, these devices maintained their charge-storing properties over 10 000 s. This proof-of-concept study is expected to open up flew avenues in 'information technology for the development of organic memories that exhibit photoinduced recovery over a wide range of wavelengths of light when combined with appropriate photoactive floating -gate materials.en_US
dc.description.sponsorshipThis work was supported by the Center for Advanced Soft Electronics under the Global Frontier Research Program (Grant No. 2013M3A6A5073175). This work was also supported by Basic Science Research Program through the National Research Foundation of Korea (NRF) funded by the Ministry of Education (2015R1D1A1A02062369).en_US
dc.language.isoen_USen_US
dc.publisherAMER CHEMICAL SOCen_US
dc.subjectphotoinduced recoveryen_US
dc.subjectorganic field-effect transistorsen_US
dc.subjectoptical memoriesen_US
dc.subjectfloating gatesen_US
dc.subjectfullereneen_US
dc.titlePhotoinduced Recovery of Organic Transistor Memories with Photoactive Floating-Gate Interlayersen_US
dc.typeArticleen_US
dc.relation.no13-
dc.relation.volume9-
dc.identifier.doi10.1021/acsami.7b02365-
dc.relation.page11759-11769-
dc.relation.journalACS APPLIED MATERIALS & INTERFACES-
dc.contributor.googleauthorJeong, Yong Jin-
dc.contributor.googleauthorYun, Dong-Jin-
dc.contributor.googleauthorKim, Se Hyun-
dc.contributor.googleauthorJang, Jaeyoung-
dc.contributor.googleauthorPark, Chan Eon-
dc.relation.code2017001478-
dc.sector.campusS-
dc.sector.daehakCOLLEGE OF ENGINEERING[S]-
dc.sector.departmentDEPARTMENT OF ENERGY ENGINEERING-
dc.identifier.pidjyjang15-
dc.identifier.orcidhttp://orcid.org/0000-0002-5548-8563-
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COLLEGE OF ENGINEERING[S](공과대학) > ENERGY ENGINEERING(에너지공학과) > Articles
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