Enhancement of the electrical characteristics for vertical NAND flash memory devices using a modified array structure
- Title
- Enhancement of the electrical characteristics for vertical NAND flash memory devices using a modified array structure
- Author
- 김태환
- Keywords
- FLOATING-GATE; CELL; TECHNOLOGY; SCHEMES
- Issue Date
- 2017-03
- Publisher
- IOP PUBLISHING LTD
- Citation
- JAPANESE JOURNAL OF APPLIED PHYSICS, v. 56, no. 4, Article no. 048003
- Abstract
- The electrical characteristics of vertical NAND flash memory devices with a modified structure were investigated by using a technology computer-aided design simulation tool in order to reduce the cell-to-cell interference. The threshold voltage shift of memory devices with a modified cell with a protruding distance of 3 nm was reduced by 88% compared to that of conventional cell. When the programming operation of the target cell with a modified array structure is performed, the cell-to-cell interference decreases due to the programmed charges of adjacent cells. (C) 2017 The Japan Society of Applied Physics
- URI
- https://iopscience.iop.org/article/10.7567/JJAP.56.048003https://repository.hanyang.ac.kr/handle/20.500.11754/113289
- ISSN
- 0021-4922; 1347-4065
- DOI
- 10.7567/JJAP.56.048003
- Appears in Collections:
- COLLEGE OF ENGINEERING[S](공과대학) > ELECTRONIC ENGINEERING(융합전자공학부) > Articles
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