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Studies of thermoelectric transport properties of atomic layer deposited gallium-doped ZnO

Title
Studies of thermoelectric transport properties of atomic layer deposited gallium-doped ZnO
Author
박진성
Keywords
Atomic layer deposition; Thermoelectrics; Ga doped ZnO; Thin films
Issue Date
2017-03
Publisher
ELSEVIER SCI LTD
Citation
CERAMICS INTERNATIONAL, v. 43, no. 10, page. 7784-7788
Abstract
The thermoelectric transport properties of atomic layer deposited (ALD) gallium doped zinc oxide (GZO) thin films were investigated to identify their potential as a thermoelectric material. The overall thermoelectric properties, such as the Seebeck coefficient and electrical conductivity, were probed as a function of Ga concentration in ZnO. The doping concentration was tuned by varying the ALD cycle ratio of zinc oxide and gallium oxide. The GZO was deposited at 250 degrees C and the doping concentration was modified from 1% to 10%. Sufficient thermoelectric properties appeared at a doping concentration of 1%. The crystallinity and electronic state, such as the effective mass, were investigated to determine the enhancement of the thermoelectric properties. The efficient Ga doping of GZO showed a Seebeck coefficient of 60 mu V/K and an electrical conductivity of 1808.32 S/cm, with a maximum power factor of 0.66 mW/mK(2).
URI
https://www.sciencedirect.com/science/article/pii/S0272884217304595?via%3Dihubhttp://repository.hanyang.ac.kr/handle/20.500.11754/113231
ISSN
0272-8842; 1873-3956
DOI
10.1016/j.ceramint.2017.03.087
Appears in Collections:
COLLEGE OF ENGINEERING[S](공과대학) > MATERIALS SCIENCE AND ENGINEERING(신소재공학부) > Articles
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