Semiconducting properties of perchlorate-doped graphene using an electrochemical method

Abstract

We report a band gap opening and p-type doping for single layer graphene by an electrochemical method. The chlorine oxide doping to graphene was carried out in 0.1 M LiClO4/acetonitrile solution. The temperature dependent conductivity of the p-type doped graphene at an applied potential of 1.5 V during the electrochemical doping process showed the band gap of 0.094 eV.