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A Small-Area and Low-Power Scan Driver Using a Coplanar a-IGZO Thin-Film Transistor With a Dual-Gate for Liquid Crystal Displays

Title
A Small-Area and Low-Power Scan Driver Using a Coplanar a-IGZO Thin-Film Transistor With a Dual-Gate for Liquid Crystal Displays
Author
권오경
Keywords
Dual gate structure; indium-gallium-zinc-oxide; semiconductor; scan driver; low-power; TFT-LCD
Issue Date
2017-02
Publisher
IEEE-INST ELECTRICAL ELECTRONICS ENGINEERS INC
Citation
IEEE ELECTRON DEVICE LETTERS, v. 38, no. 2, page. 195-198
Abstract
This letter proposes a small-area and low-power scan driver using a coplanar amorphous indium-gallium- zinc oxide (a-IGZO) thin-film transistor (TFT) with a dual gate for TFT liquid crystal displays. The size of the pull-up TFT of the proposed scan driver is reduced by 30% when the ON-current of the coplanar a-IGZO TFT with a dual gate increases by 65%, when compared with the coplanar a-IGZO TFT with a single gate at a V-gs of 10 V and a V-ds of 10 V. This reduced size of the pull-up TFT decreases the capacitance of the clock signal (CLK) bus line. Owing to the reduced capacitance, the resistance of the CLK line can be increasedwhilemaintaining the resistance and capacitance delay of the CLK, and thereby the width of the CLK bus line can be reduced. Moreover, the dual gate, which forms an overlapped capacitor to bootstrap the gate voltage of the pull-up TFT, can further reduce the area of the scan driver. The width and measured power consumption of the fabricated scan driver with the proposed TFT are 2.63 mm and 2.41 W, which are both reduced by 20% compared with those of the scan driver with the conventional TFT.
URI
https://ieeexplore.ieee.org/document/7782375http://repository.hanyang.ac.kr/handle/20.500.11754/112852
ISSN
0741-3106; 1558-0563
DOI
10.1109/LED.2016.2638832
Appears in Collections:
COLLEGE OF ENGINEERING[S](공과대학) > ELECTRONIC ENGINEERING(융합전자공학부) > Articles
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