Improved electrical properties of atomic layer deposited tin disulfide at low temperatures using ZrO2 layer
- Title
- Improved electrical properties of atomic layer deposited tin disulfide at low temperatures using ZrO2 layer
- Author
- 전형탁
- Keywords
- TRANSITION-METAL DICHALCOGENIDES; FIELD-EFFECT TRANSISTORS; MOS2 TRANSISTORS; MONOLAYER; GRAPHENE; SNS2
- Issue Date
- 2017-02
- Publisher
- AMER INST PHYSICS
- Citation
- AIP ADVANCES, v. 7, no. 2, Article no. 025311
- Abstract
- We report the effect of zirconium oxide (ZrO2) layers on the electrical characteristics of multilayered tin disulfide (SnS2) formed by atomic layer deposition (ALD) at low temperatures. SnS2 is a two-dimensional (2D) layered material which exhibits a promising electrical characteristics as a channel material for field-effect transistors (FETs) because of its high mobility, good on/off ratio and low temperature processability. In order to apply these 2D materials to large-scale and flexible electronics, it is essential to develop processes that are compatible with current electronic device manufacturing technology which should be conducted at low temperatures. Here, we deposited a crystalline SnS2 at 150 degrees C using ALD, and we then annealed at 300 degrees C. X-ray diffraction (XRD) and Raman spectroscopy measurements before and after the annealing showed that SnS2 had a hexagonal (001) peak at 14.9 degrees and A(1g) mode at 313 cm(-1). The annealed SnS2 exhibited clearly a layered structure confirmed by the high resolution transmission electron microscope (HRTEM) images. Back-gate FETs with SnS2 channel sandwiched by top and bottom ZrO2 on p(++) Si/SiO2 substrate were suggested to improve electrical characteristics. We used a bottom ZrO2 layer to increase adhesion between the channel and the substrate and a top ZrO2 layer to improve contact property, passivate surface, and protect from process-induced damages to the channel. ZTZ (ZrO2/SnS2/ZrO2) FETs showed improved electrical characteristics with an on/off ratio of from 0.39 x10(3) to 6.39 x10(3) and a mobility of from 0.0076 cm(2)/ Vs to 0.06 cm(2)/Vs. (c) 2017 Author(s).
- URI
- https://aip.scitation.org/doi/10.1063/1.4977887https://repository.hanyang.ac.kr/handle/20.500.11754/112648
- ISSN
- 2158-3226
- DOI
- 10.1063/1.4977887
- Appears in Collections:
- COLLEGE OF ENGINEERING[S](공과대학) > MATERIALS SCIENCE AND ENGINEERING(신소재공학부) > Articles
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