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Operating mechanisms of highly-reproducible write-once-read-many-times memory devices based on graphene quantum dot: poly(methyl silsesquioxane) nanocomposites

Title
Operating mechanisms of highly-reproducible write-once-read-many-times memory devices based on graphene quantum dot: poly(methyl silsesquioxane) nanocomposites
Author
김태환
Keywords
ORGANIC BISTABLE DEVICES; NONVOLATILE MEMORY; POLYMER; LAYER; SHEETS; FILMS
Issue Date
2017-01
Publisher
AMER INST PHYSICS
Citation
APPLIED PHYSICS LETTERS, v. 110, no. 1, Article no. 013301
Abstract
Resistive switching memory devices were fabricated utilizing graphene quantum dot (GQD): poly(methyl silsesquioxane) (PMSSQ) hybrid nanocomposites. Current-voltage curves for the Al/GQD: PMSSQ/indium-tin-oxide devices at room temperature showed write-once-read-many-times memory (WORM) characteristics with an ON/OFF ratio of as large as 10(6) due to the homogeneous dispersion of the GQDs in the PMSSQ matrix. The WORM devices maintained retention times larger than 2 x 10(4) s under ambient conditions. The devices showed high device-to-device reproducibility with threshold-voltage distributions between 3 and 5V. The ON state currents remained between 10(-6) and 10(-3) A, and the OFF state currents maintained between 10(-12) and 10(-9) A. The operating mechanisms concerning the interaction between the GQDs and the PMSSQ matrix for the resistive-switch phenomenon were analyzed on the basis of the I-V results and with the aid of the energy band diagram. Published by AIP Publishing.
URI
https://aip.scitation.org/doi/10.1063/1.4973358http://repository.hanyang.ac.kr/handle/20.500.11754/112326
ISSN
0003-6951; 1077-3118
DOI
10.1063/1.4973358
Appears in Collections:
COLLEGE OF ENGINEERING[S](공과대학) > ELECTRONIC ENGINEERING(융합전자공학부) > Articles
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