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Line-Width Variation with Absorber Thickness in Extreme Ultraviolet Lithography

Title
Line-Width Variation with Absorber Thickness in Extreme Ultraviolet Lithography
Author
안일신
Issue Date
2005-08
Publisher
한국물리학회
Citation
JOURNAL OF THE KOREAN PHYSICAL SOCIETY, v. 47, No. 2, Page. 223-227
Abstract
The types and thicknesses of the mask materials for extreme ultraviolet lithography significantly influence the pattern formation. Since the reflectance of the absorber changes periodically with the absorber thickness, we investigated the effect of the absorber thickness on the near-field and aerial image for 32 nm line/space and isolated pattern. We chose germanium and chromium as absorber materials. We also investigated the line-width variation by using absorber thicknesses with different duty ratios. The SOLID-EUV of sigma-C was used for this study.
URI
http://www.jkps.or.kr/journal/view.html?uid=7116&vmd=Fullhttp://repository.hanyang.ac.kr/handle/20.500.11754/111372
ISSN
0374-4884; 1976-8524
Appears in Collections:
COLLEGE OF SCIENCE AND CONVERGENCE TECHNOLOGY[E](과학기술융합대학) > PHOTONICS AND NANOELECTRONICS(나노광전자학과) > Articles
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