Tunneling field effect transistors (TFETs) with 3D fin-shaped channel structure and their electrical characteristics
- Title
- Tunneling field effect transistors (TFETs) with 3D fin-shaped channel structure and their electrical characteristics
- Author
- 최창환
- Keywords
- Tunneling field effect transistor (TFET); Fin-typed TFET; Interfacial layer (IL); Subthreshold swing (S.S); Interface trap (N-it)
- Issue Date
- 2019-04
- Publisher
- PERGAMON-ELSEVIER SCIENCE LTD
- Citation
- SOLID-STATE ELECTRONICS, v. 154, Page. 1-6
- Abstract
- In this study, we have demonstrated 3D fin-structured channel Silicon-On-Insulator (SOI) tunneling field effect transistor (TFET) to enhance transistor on-current (I-on) by reducing leakage current and enhancing gate controllability. By comparing with planar TFET, the subthreshold swing (S.S) value is apparently reduced by similar to 20 mV/dec with increased I-on using fin-typed TFET. Moreover, we have investigated impact of the interfacial layer (IL) modulation on the electrical characteristics of each planar TFET and fin-typed TFET, where IL modulation was performed by adopting modified chemical oxide as well as interface treatment. The IL modulation is substantial on the fin-typed TFET in terms of off leakage current (I-off) as well as threshold voltage instability (Delta V-th) against electrical stress, indicating 3D channel is more sensitive to interface condition. Our results suggest that alternative 3D structure with an appropriate interface treatment might be beneficial to attain better I-on while keeping lower S.S and I-off.
- URI
- https://www.sciencedirect.com/science/article/pii/S0038110118303873?via%3Dihubhttps://repository.hanyang.ac.kr/handle/20.500.11754/110977
- ISSN
- 0038-1101; 1879-2405
- DOI
- 10.1016/j.sse.2019.01.003
- Appears in Collections:
- COLLEGE OF ENGINEERING[S](공과대학) > MATERIALS SCIENCE AND ENGINEERING(신소재공학부) > Articles
- Files in This Item:
There are no files associated with this item.
- Export
- RIS (EndNote)
- XLS (Excel)
- XML