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Bulk Effects of Thermal Flow Resists

Title
Bulk Effects of Thermal Flow Resists
Author
안일신
Issue Date
2005-06
Publisher
KOREAN PHYSICAL SOC
Citation
JOURNAL OF THE KOREAN PHYSICAL SOCIETY, v. 46, No. 6, Page. 1439-1444
Abstract
In the semiconductor lithography process, the thermal flow process after development can pattern sub-100-nm contact holes and saves the cost of using resolution enhancement technology. In this study, the resist flowing behavior and the contact hole shrinkage are described by using the level-set method and the thermal reflow length. The viscosity variable affects the shrinkage of the critical dimension. This variable is extracted from the experimental data by using a proposed equation. Our simulation results are in good agreement with the experimental results for various baking temperatures and times. Although the most effective process of a 193-nm chemically amplified resist is the post exposure bake process, the inhibition reaction order of the enhanced Mack model, which is a parameter of the development process, is shown to be the most controllable parameter for the critical dimension. In the resist reflow process, the side-wall angle of the resist profile is decreased by the surface tension. This phenomenon is,shown to be similar to that in the spin coating process by modeling a dimensionless parameter in spin coating.
URI
http://www.jkps.or.kr/journal/view.html?uid=7016&vmd=Fullhttp://repository.hanyang.ac.kr/handle/20.500.11754/110885
ISSN
0374-4884; 1976-8524
Appears in Collections:
COLLEGE OF SCIENCE AND CONVERGENCE TECHNOLOGY[E](과학기술융합대학) > PHOTONICS AND NANOELECTRONICS(나노광전자학과) > Articles
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