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Fabrication of Quantum Well Infrared Photodetectors using Chemically Wet-Etched Grid Nanostructures

Title
Fabrication of Quantum Well Infrared Photodetectors using Chemically Wet-Etched Grid Nanostructures
Author
정희준
Keywords
quantum well; QWIP; wet etching; lateral quantization; GaAs
Issue Date
2005-02
Publisher
INST PURE APPLIED PHYSICS
Citation
JAPANESE JOURNAL OF APPLIED PHYSICS PART 1-REGULAR PAPERS BRIEF COMMUNICATIONS & REVIEW PAPERS, v. 44, No. 2, Page. 1123-1127
Abstract
Quantum well infrared photodetectors were fabricated using a chemical wet etching method, defined on a GaAs/AlGaAs heterostructure. These devices utilized grid nanostructures for effective light coupling through the diffraction effect. By reducing grid widths close to the depletion of the quantum well, we observed a systematic increase in the normalized responsivity of the photodetectors, as a possible signature of the quantum size effect, with blue shift. We also achieved precise control of grid widths through wet etching that does not require an expensive processing instrument.
URI
https://iopscience.iop.org/article/10.1143/JJAP.44.1123http://repository.hanyang.ac.kr/handle/20.500.11754/110193
ISSN
0021-4922
DOI
10.1143/JJAP.44.1123
Appears in Collections:
COLLEGE OF SCIENCE AND CONVERGENCE TECHNOLOGY[E](과학기술융합대학) > APPLIED PHYSICS(응용물리학과) > Articles
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