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Phase-controlled SnO2 and SnO growth by atomic layer deposition using Bis (N-ethoxy-2,2-dimethyl propanamido)tin precursor

Title
Phase-controlled SnO2 and SnO growth by atomic layer deposition using Bis (N-ethoxy-2,2-dimethyl propanamido)tin precursor
Author
박진성
Keywords
SnO2; SnO; Atomic layer deposition; Bis(N-ethoxy-2 2-dimethyl propanamido)tin; Quadrupole mass spectrometer
Issue Date
2019-03
Publisher
ELSEVIER SCI LTD
Citation
CERAMICS INTERNATIONAL, v. 45, NO 4, Page. 5124-5132
Abstract
Atomic layer deposition (ALD) of SnO and SnO2 thin films was successfully demonstrated over a wide temperature range of 70300 degrees C using a divalent Sn-precursor, bis(N-ethoxy-2,2-dimethyl propanamido)tin (Sn(edpa)(2)). The regulated growth of the SnO2 and SnO films was realized by employing O-2-plasma and H2O, respectively. Pure SnO2 and SnO films were deposited with negligible C and N contents at all the growth temperatures, and the films exhibited polycrystalline and amorphous structures, respectively. The SnO2 films presented a high transmittance of > 85% in the wavelength range of 400-700 nm and an indirect band gap of 3.6-4.0 eV; meanwhile, the SnO films exhibited a lower transmittance of > 60% and an indirect band gap of 2.9-3.0 eV. The SnO2 films exhibited n-type semiconducting characteristics with carrier concentrations of 8.5 x 10(16)-1.2 x 10(20) cm(-3) and Hall mobilities of 2-26 cm(2)/V s. By employing an alternate ALD growth of SnO and SnO2 films, SnO2/SnO multilayer structures were successfully fabricated at 120 degrees C. The in-situ quadrupole mass spectrometry analysis performed during ALD revealed that the oxidation of chemisorbed Sn-precursor occurs dominantly during the Sn(edpa)(2)/O-2-plasma ALD process, resulting in the production of combustion by-products, whereas the Sn(edpa)(2)/H2O ALD process was governed by a ligand exchange reaction with the maintenance of the original oxidation state of Sn2+.
URI
https://www.sciencedirect.com/science/article/pii/S0272884218327457?via%3Dihubhttp://repository.hanyang.ac.kr/handle/20.500.11754/110100
ISSN
0272-8842; 1873-3956
DOI
10.1016/j.ceramint.2018.09.263
Appears in Collections:
COLLEGE OF ENGINEERING[S](공과대학) > MATERIALS SCIENCE AND ENGINEERING(신소재공학부) > Articles
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