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Chromeless Phase Lithography Using Scattering Bars and Zebra Patterns

Title
Chromeless Phase Lithography Using Scattering Bars and Zebra Patterns
Author
정희준
Keywords
optical proximity correction (OPC); chromeless phase lithography (CPL); scattering bars (SBs); zebra patterns; transmission
Issue Date
2006-11
Publisher
INST PURE APPLIED PHYSICS
Citation
JAPANESE JOURNAL OF APPLIED PHYSICS PART 1-REGULAR PAPERS BRIEF COMMUNICATIONS & REVIEW PAPERS, v. 45, No. 11, Page. 8967-8971
Abstract
Resolution enhancement technology refers to a technique that extends the usable resolution of an imaging system without decreasing the wavelength of light or increasing the numerical aperture (NA) of the imaging tool. Off-axis illumination and a phase shift mask (PSM) are essentially accompanied by optical proximity correction (OPC) for most devices nowadays. Chromeless phase lithography (CPL) is one of the PSM technologies. To obtain the best resolution, proper OPC is required with CPL. While the most common application of OPC is to provide mask bias, an additional technique is the use of scattering bars (SBs) and zebra patterns. We compared zebra patterns for 65 nm lines and spaces (L/S) and 45 nin isolated line (I/L) with Sl3s. To optimize zebra pattern density, we vary the line width and pitch of the zebra patterns. We confirmed that the use of SB and zebra patterns could realize the target linewidth and control necessary for acheiving dense L/S and I/L.
URI
https://iopscience.iop.org/article/10.1143/JJAP.45.8967http://repository.hanyang.ac.kr/handle/20.500.11754/108827
ISSN
0021-4922
DOI
10.1143/JJAP.45.8967
Appears in Collections:
COLLEGE OF SCIENCE AND CONVERGENCE TECHNOLOGY[E](과학기술융합대학) > APPLIED PHYSICS(응용물리학과) > Articles
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