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dc.contributor.author오혜근-
dc.date.accessioned2019-08-20T07:40:05Z-
dc.date.available2019-08-20T07:40:05Z-
dc.date.issued2006-11-
dc.identifier.citationJAPANESE JOURNAL OF APPLIED PHYSICS PART 1-REGULAR PAPERS BRIEF COMMUNICATIONS & REVIEW PAPERS, v. 45, No. 11, Page. 8920-8924en_US
dc.identifier.issn0021-4922-
dc.identifier.urihttps://iopscience.iop.org/article/10.1143/JJAP.45.8920/meta-
dc.identifier.urihttp://repository.hanyang.ac.kr/handle/20.500.11754/108822-
dc.description.abstractThe use of an alternating phase shift mask is an effective method of improving resolution compared with binary and embedded attenuated phase shift mask technologies, but the intensity imbalance between the light propagating through the zero- and pi-shifted spaces is the main obstacle to be overcome. Several technical methods are proposed to compensate for such an imbalance in the mask manufacturing process. The known general solutions for the intensity imbalance are applying a space bias and/or an undercut of the space region of the alternating phase shift mask. We evaluated the uniformity of the resist profile after the application of a space bias or an undercut of the mask space region in order to minimize the pattern position displacement and the critical dimension difference between the phase-shifted and unshifted regions for the 90 and 65 nin nodes. Additionally, we found that the imperfect side wall angle of an undercut or a space bias obviously affected the quality of pattern fidelity and hence investigated how the side wall angle affects pattern printability.en_US
dc.language.isoen_USen_US
dc.publisherINST PURE APPLIED PHYSICSen_US
dc.subjectalternating phase shift masken_US
dc.subjectpitchen_US
dc.subjectbiasen_US
dc.subjectundercuten_US
dc.subjectlithographyen_US
dc.titleInvestigation of optimum biasing and undercut for single trench alternating phase shift mask in 193 nm lithographyen_US
dc.typeArticleen_US
dc.identifier.doi10.1143/JJAP.45.8920-
dc.relation.journalJAPANESE JOURNAL OF APPLIED PHYSICS PART 1-REGULAR PAPERS BRIEF COMMUNICATIONS & REVIEW PAPERS-
dc.contributor.googleauthorLee, Ji-Eun-
dc.contributor.googleauthorKang, Hye-Young-
dc.contributor.googleauthorShin, Dong-Soo-
dc.contributor.googleauthorJeong, Hee-Jun-
dc.contributor.googleauthorAn, Ilsin-
dc.contributor.googleauthorAhn, Chang-Nam-
dc.contributor.googleauthorOh, Hye-Keun-
dc.relation.code2008212719-
dc.sector.campusE-
dc.sector.daehakCOLLEGE OF SCIENCE AND CONVERGENCE TECHNOLOGY[E]-
dc.sector.departmentDEPARTMENT OF APPLIED PHYSICS-
dc.identifier.pidhyekeun-
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COLLEGE OF SCIENCE AND CONVERGENCE TECHNOLOGY[E](과학기술융합대학) > APPLIED PHYSICS(응용물리학과) > Articles
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