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Simulation of rectangular isolated pattern images by applying phase shift masks in high-exposure gaps to protect LCD photo masks

Title
Simulation of rectangular isolated pattern images by applying phase shift masks in high-exposure gaps to protect LCD photo masks
Author
오혜근
Issue Date
2006-07
Publisher
한국물리학회
Citation
JOURNAL OF THE KOREAN PHYSICAL SOCIETY, v. 49, No. 1, Page. 115-120
Abstract
In a proximity-type aligner, the resolution is inversely proportional to the exposure gap, which is the distance between the photo mask and the photoresist-coated glass. The exposure gap is usually 100 sim 200 mu m, so protecting the photo mask from particles or chips, which can exist easily between them, is not easy work. Though a high-exposure gap is effective for reducing mask pollution, we cannot follow the high gap idea due to diffraction. In order to evaluate the effect of diffraction exactly, we applied an attenuated phase shift mask by using commercial software (Solid - C). We analyzed the roundness of the rectangular isolated pattern as functions of the exposure gap and of the transmission in the mask's opaque area. We found that the roundness of the isolated pattern was improved by 20 \%; consequently, we expect that it will be possible to improve pattern profiles in high-exposure gaps by using attenuated phase shift mask.
URI
http://www.jkps.or.kr/journal/view.html?uid=7802&vmd=Fullhttp://repository.hanyang.ac.kr/handle/20.500.11754/108325
ISSN
0374-4884; 1976-8524
Appears in Collections:
COLLEGE OF SCIENCE AND CONVERGENCE TECHNOLOGY[E](과학기술융합대학) > APPLIED PHYSICS(응용물리학과) > Articles
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