Growth mode and structural characterization of GaSb on Si(001) substrate: A transmission electron microscopy study
- Title
- Growth mode and structural characterization of GaSb on Si(001) substrate: A transmission electron microscopy study
- Author
- 오재응
- Issue Date
- 2006-06
- Publisher
- AMER INST PHYSICS
- Citation
- APPLIED PHYSICS LETTERS, v. 88, No. 24, Article no. 241907
- Abstract
- Growth mode and structural properties of GaSb layers grown on silicon substrate by molecular beam epitaxy method are investigated by transmission electron microscopy. It is found that the GaSb grows to three-dimensional islands and grains are tilted to reduce a lattice mismatch through twin boundaries when they are directly grown on Si substrate. A low-temperature (LT) AlSb buffer plays a key role in transferring the growth mode from a three-dimensional island to a layer-by-layer structure. When the LT AlSb layer is used as a buffer, 90 degrees misfit dislocations, with the Burgers vector b of 1/2a < 110 >, are observed on the interface.
- URI
- https://aip.scitation.org/doi/abs/10.1063/1.2209714https://repository.hanyang.ac.kr/handle/20.500.11754/108169
- ISSN
- 0003-6951; 1077-3118
- DOI
- 10.1063/1.2209714
- Appears in Collections:
- COLLEGE OF ENGINEERING SCIENCES[E](공학대학) > ELECTRICAL ENGINEERING(전자공학부) > Articles
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