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Nanoscale Lines Patterned by 1 : 1 Electron-Beam Projection Lithography Using an Electron Emission Mask

Title
Nanoscale Lines Patterned by 1 : 1 Electron-Beam Projection Lithography Using an Electron Emission Mask
Author
김동욱
Issue Date
2006-05
Publisher
KOREAN PHYSICAL SOC
Citation
JOURNAL OF THE KOREAN PHYSICAL SOCIETY, v. 48, No. 5, Page. 964-967
Abstract
We have studied a 1 : 1 electron-beam projection lithography method using an electron emission mask (EEM). The method is applicable to printing nanoscale patterns by using very short exposure below 10 seconds. The design and the characteristics of the EEM fabricated with a metal-insulator-metal (MIM) structure are discussed. The I-V characteristics of EEM show that the optimal thickness of the insulator layer of MIM structure is 12 nm, and the electron-beam resist developed by using a 1 : 1 projection of EEM shows patterns with 100-nm linewidths.vspace{-0.2cm}
URI
http://www.jkps.or.kr/journal/view.html?uid=7534&vmd=Fullhttp://repository.hanyang.ac.kr/handle/20.500.11754/107997
ISSN
0374-4884; 1976-8524
Appears in Collections:
COLLEGE OF SCIENCE AND CONVERGENCE TECHNOLOGY[E](과학기술융합대학) > ETC
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