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Simulation of mask induced polarization effect on imaging in immersion lithography

Title
Simulation of mask induced polarization effect on imaging in immersion lithography
Author
오혜근
Keywords
FDTD; High NA; Mask polarization; Sub-45 nm node; Vector diffraction
Issue Date
2006-02
Publisher
SPIE
Citation
Proceedings of SPIE - The International Society for Optical Engineering; SPIE 31st International Symposium on Advanced Lithography, v. 6154, Article no. 61542T
Abstract
The minimum feature size of the semiconductor device will be smaller and smaller because of the increasing demand for the high integration of the device. According to recently proposed roadmap, ArF immersion lithography will be used for 65 nm to 45 nm technology nodes. Polarization effect becomes a more important factor due to the increasing demand for high NA optical system and the use of immersion lithography. It is important to know that the polarization effect is induced by mask in small size patterning. The unpolarized plane waves leaving the illumination system are diffracted by the mask. So the light beam going through the mask will experience induced polarization by the mask. In this paper, we considered the change of polarization state as a function of mask properties. We calculated vector diffraction of 193 nm incident light. The masks considered are the chromeless mask, a binary chrome mask and 6 % attenuated phase shifting mask. We use the finite-difference time-domain method to solve the Maxwell equation. The aerial image depends on the polarization states induced by the mask properties such as materials, thickness, and pitch.
URI
https://www.spiedigitallibrary.org/conference-proceedings-of-spie/6154/61542T/Simulation-of-mask-induced-polarization-effect-on-imaging-in-immersion/10.1117/12.656204.fullhttp://repository.hanyang.ac.kr/handle/20.500.11754/107664
ISSN
0277-786X
DOI
10.1117/12.656204
Appears in Collections:
COLLEGE OF SCIENCE AND CONVERGENCE TECHNOLOGY[E](과학기술융합대학) > APPLIED PHYSICS(응용물리학과) > Articles
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