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dc.contributor.author김동욱-
dc.date.accessioned2019-07-18T02:13:14Z-
dc.date.available2019-07-18T02:13:14Z-
dc.date.issued2006-01-
dc.identifier.citationJAPANESE JOURNAL OF APPLIED PHYSICS PART 1-REGULAR PAPERS BRIEF COMMUNICATIONS & REVIEW PAPERS, v. 45, No. 1A, Page. 346-349en_US
dc.identifier.issn0021-4922-
dc.identifier.urihttps://iopscience.iop.org/article/10.1143/JJAP.45.346/meta-
dc.identifier.urihttp://repository.hanyang.ac.kr/handle/20.500.11754/107597-
dc.description.abstractCarbon nanofibers (CNFs), grown by dc plasma-enhanced chemical vapor deposition, have differences in morphology and resulting field emission properties depending on underlying buffer layers. We patterned 200-nm-sized Ni catalyst dots, with 2 - 5 m spacing, by e-beam lithography and obtained regularly spaced vertically aligned CNF arrays. CNFs, grown on Ti-buffered Si substrates, showed a needle like shape with a high aspect ratio, but CNFs directly grown on Si substrates, had a cone like shape. The former showed a smaller turn-on field (11 V/ m) than the latter (27 V/ m), in field emission current measurements. Moreover, the maximum current density of the CNF array on Ti was as high as 10 A/cm2.en_US
dc.language.isoen_USen_US
dc.publisherINST PURE APPLIED PHYSICSen_US
dc.subjectcarbon nanofiberen_US
dc.subjectdc plasma-enhanced chemical vapor depositionen_US
dc.subjectmorphologyen_US
dc.subjectfield emissionen_US
dc.titleMorphology control of patterned carbon nanofiber arrays for field emission applicationsen_US
dc.typeArticleen_US
dc.identifier.doi10.1143/JJAP.45.346-
dc.relation.journalJAPANESE JOURNAL OF APPLIED PHYSICS PART 1-REGULAR PAPERS SHORT NOTES &-
dc.contributor.googleauthorKim, DW-
dc.contributor.googleauthorJin, S-
dc.relation.code2012204500-
dc.sector.campusE-
dc.sector.daehakCOLLEGE OF SCIENCE & TECHNOLOGY[E]-
dc.sector.departmentDIVISION OF SCIENCE & TECHNOLOGY-
dc.identifier.pidpeterkim-
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COLLEGE OF SCIENCE AND CONVERGENCE TECHNOLOGY[E](과학기술융합대학) > ETC
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