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Photoresist Adhesion Effect of Resist Reflow Process

Title
Photoresist Adhesion Effect of Resist Reflow Process
Author
안일신
Keywords
resist reflow process; contact hole; adhesion; Navier-Stokes equation
Issue Date
2007-09
Publisher
INST PURE APPLIED PHYSICS
Citation
JAPANESE JOURNAL OF APPLIED PHYSICS PART 1-REGULAR PAPERS BRIEF COMMUNICATIONS & REVIEW PAPERS, v. 46, No. 9A, Page. 5738-5741
Abstract
Making a sub-100nm contact hole pattern is one of the difficult issues in the semiconductor process. Compared with another fabrication process, the resist reflow process is a good method of obtaining a very high resolution contact hole. However, it is not easy to predict the actual reflow result by simulation because very complex physics and chemistry are involved in the resist reflow process. We must know accurate physical and chemical constant values and many fabrication variables for better prediction. We made a resist reflow simulation tool to predict approximate resist reflow as functions of pitch, temperature, time, and array, among others. We were able to observe the simulated top view, side view, and changed hole size. We used the Navier-Stokes equation for resist reflow. We varied the reflow time, temperature, surface tension, and three-dimensional volume effect of our old model. However, photoresist adhesion is another very important factor that was not included in the old model. Thus, the adhesion effect was added on the Navier-Stokes equation, and such a case showed distinct differences in the reflowed resist profile and contact hole width from the case of the no adhesion effect.
URI
https://iopscience.iop.org/article/10.1143/JJAP.46.5738/metahttp://repository.hanyang.ac.kr/handle/20.500.11754/106924
ISSN
0021-4922
DOI
10.1143/JJAP.46.5738
Appears in Collections:
COLLEGE OF SCIENCE AND CONVERGENCE TECHNOLOGY[E](과학기술융합대학) > PHOTONICS AND NANOELECTRONICS(나노광전자학과) > Articles
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