447 0

Full metadata record

DC FieldValueLanguage
dc.contributor.author오혜근-
dc.date.accessioned2019-06-28T05:10:50Z-
dc.date.available2019-06-28T05:10:50Z-
dc.date.issued2007-09-
dc.identifier.citationProceedings of SPIE - The International Society for Optical Engineering, v. 6730, Article no. 673043en_US
dc.identifier.isbn978-081946887-1-
dc.identifier.issn0277-786X-
dc.identifier.urihttps://www.spiedigitallibrary.org/conference-proceedings-of-spie/6730/673043/Critical-dimension-control-for-32-nm-random-contact-hole-array/10.1117/12.746518.full-
dc.identifier.urihttps://repository.hanyang.ac.kr/handle/20.500.11754/106919-
dc.description.abstract50 nm random contact hole array by resist reflow process (RRP) was studied to make 32 nm node device. Patterning of smaller contact hole array is harder than patterning the line and space. RRP has a lot of advantages, but RRP strongly depends on pattern array, pitch, and shape. Thus, we must have full knowledge for pattern dependency after RRP, and then we need to have optimum optical proximity corrected mask including RRP to compensate the pattern dependency in random array. To make optimum optical proximity and RRP corrected mask, we must have better understanding that how much resist flows and where the contact hole locations are after RRP. A simulation is made to correctly predict RRP result by including the RRP parameters such as viscosity, adhesion force, surface tension and location of the contact hole. As a result, we made uniform 50 nm contact hole patterns even for the random contact hole array and for different shaped contact hole array by optical proximity corrected RRP.en_US
dc.language.isoen_USen_US
dc.publisherSPIEen_US
dc.subjectBulk effecten_US
dc.subjectContact holeen_US
dc.subjectOptical proximity correctionen_US
dc.subjectResist reflow processen_US
dc.subjectViscosityen_US
dc.titleCritical dimension control for 32 nm random contact hole array with resist reflow processen_US
dc.typeArticleen_US
dc.identifier.doi10.1117/12.746518-
dc.contributor.googleauthorPark, J.-M.-
dc.contributor.googleauthorKang, Y.-M.-
dc.contributor.googleauthorPark, S.-W.-
dc.contributor.googleauthorHong, J.-Y.-
dc.contributor.googleauthorOh, H.-K.-
dc.sector.campusE-
dc.sector.daehakCOLLEGE OF SCIENCE AND CONVERGENCE TECHNOLOGY[E]-
dc.sector.departmentDEPARTMENT OF APPLIED PHYSICS-
dc.identifier.pidhyekeun-
Appears in Collections:
COLLEGE OF SCIENCE AND CONVERGENCE TECHNOLOGY[E](과학기술융합대학) > APPLIED PHYSICS(응용물리학과) > Articles
Files in This Item:
There are no files associated with this item.
Export
RIS (EndNote)
XLS (Excel)
XML


qrcode

Items in DSpace are protected by copyright, with all rights reserved, unless otherwise indicated.

BROWSE