분무열분해법에 의하여 제조한 FTO 투명전도막의 F/Sn 비율에 따른 전기, 광학적 특성과 XPS 분석

Abstract

Fluorine-doped tin oxide (FTO) thin film was coated on aluminosilicate glass at 450oC by spray pyrolysis method. In the range of 0-2.7 molar ratio of F/Sn, the variations of electrical conductivity and visible light transmission were investigated. At the F/Sn ratio of 1.765, the film showed the lowest electrical resistivity value of 3.0×10-4Wcm, the highest carrier concentration of 2.404×1021/cm3, and about 8cm2/V톝ec of electronic mobility. The FTO film showed a preferred orientation of (200) plane parallel to the substrate. X-ray photoelectron spectroscopy analysis results indicated that the contents of Sn4+-O bonding are the highest at 1.765 of F/Sn molar ratio.