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Interface Resistance Switching Characteristics of Metal/Nb-Doped SrTiO3 Junctions

Title
Interface Resistance Switching Characteristics of Metal/Nb-Doped SrTiO3 Junctions
Author
김동욱
Keywords
Resistance switching; SrTiO 3; Junction
Issue Date
2007-05
Publisher
KOREAN PHYSICAL SOC
Citation
JOURNAL OF THE KOREAN PHYSICAL SOCIETY, v. 50, No. 5, Page. 1294~1297
Abstract
We report on the transport properties of junctions consisting of metal electrodes (M = Ti, Ni, and Pt) and (001)-oriented Nb-doped SrTiO3 (Nb:STO) single crystals. The junctions with M = Ti, which had a shallow work function, exhibited linear current-voltage (I-V ) characteristics without hysteresis. For M = Ni and Pt, with a large work function, the junctions showed rectifying I-V characteristics and notable hysteresis upon polarity reversal. The resistance change ratio for M = Ni (Pt) did (not) depend on the doping ratio of Nb:STO. This clearly suggests that the metal work function may not be sufficient to explain the resistance switching.
URI
http://www.jkps.or.kr/journal/view.html?uid=8580&vmd=Fullhttp://repository.hanyang.ac.kr/handle/20.500.11754/106494
ISSN
0374-4884; 1976-8524
DOI
10.3938/jkps.50.1294
Appears in Collections:
COLLEGE OF SCIENCE AND CONVERGENCE TECHNOLOGY[E](과학기술융합대학) > ETC
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