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ICP-CVD 방법으로 성장된 탄소 나노튜브의 구조적 특성 및 전계방출 특성: 기판전압 인가 효과

Title
ICP-CVD 방법으로 성장된 탄소 나노튜브의 구조적 특성 및 전계방출 특성: 기판전압 인가 효과
Other Titles
Structural and Field-emissive Properties of Carbon Nanotubes Produced by ICP-CVD: Effects of Substrate-Biasing
Author
박진석
Keywords
Carbon nanotubes (CNTs); Substrate-bias effect; Nanostructure; Field-emissive property; Inductively-coupled plasma vapor deposition (ICP-CVD)
Issue Date
2007-01
Publisher
대한전기학회
Citation
전기학회논문지, v. 56, No. 1, Page. 132 - 138
Abstract
Carbon nanotubes (CNTs) are grown on Ni catalysts employing an inductively-coupled plasma chemical vapor deposition (ICP-CVD) method. The structural and field-emissive properties of the CNTs grown are characterized in terms of the substrate-bias applied. Characterization using the various techniques, such as field-emission scanning electron microscopy (FESEM), high-resolution transmission electron microscopy (HRTEM). Auger spectroscopy (AES), and Raman spectroscopy, shows that the structural properties of the CNTs, including their physical dimensions and crystal qualities, as well as the nature of vertical growth, are strongly dependent upon the application of substrate bias during CNT growth. It is for the first time observed that the prevailing growth mechanism of CNTs, which is either due to tip-driven growth or based-on-catalyst growth, may be influenced by substrate biasing. It is also seen that negatively substrate-biasing would promote the vertical-alignment of the CNTs grown, compared to positively substrate-biasing. However, the CNTs grown under the positively-biased condition display a higher electron-emission capability' than those grown under the negatively-biased condition or without any bias applied.
URI
http://www.dbpia.co.kr/journal/articleDetail?nodeId=NODE01275925&language=ko_KRhttp://repository.hanyang.ac.kr/handle/20.500.11754/106224
ISSN
1975-8359
Appears in Collections:
COLLEGE OF ENGINEERING SCIENCES[E](공학대학) > ELECTRICAL ENGINEERING(전자공학부) > Articles
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