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Theoretical investigation of pattern printability of oxidized Si and Ru capping models for extreme ultraviolet lithography (EUVL)

Title
Theoretical investigation of pattern printability of oxidized Si and Ru capping models for extreme ultraviolet lithography (EUVL)
Author
오혜근
Keywords
EUVL; capping layer; oxidation; Ru/Mo/Si; rellectivity; aerial image intensity
Issue Date
2007-01
Publisher
ELSEVIER SCIENCE BV
Citation
MICROELECTRONIC ENGINEERING, v. 84, No. 5-8, Page. 1023-1026
Abstract
The optical performance of potential capping materials, Ru and Si, were quantitatively investigated by simulating the reflectivity on a mask and aerial image intensity transferred through the system. The refiectivity on the capping surface was calculated according to the capping thickness variation by using the Fresnel equation. For the calculation of the aerial image intensity, SOLID-EUV, which is capable of rigorous electromagnetic-field computation, was employed. Through the investigation of pattern image characteristics for partially oxidized capping models, the Ru capping model turned out to show a higher EUV reflectivity, smaller line variation, and a higher oxidation sensitivity compared to the case of the Si capping model. It could be reasonably concluded that Ru can be proposed as a potential capping material for achieving a better optical performance considering the experimentally proven high oxidation stability of the Ru capping model. (c) 2007 Elsevier B.V. All rights reserved.
URI
https://www.sciencedirect.com/science/article/pii/S0167931707000871http://repository.hanyang.ac.kr/handle/20.500.11754/106191
ISSN
0167-9317
DOI
10.1016/j.mee.2007.01.019
Appears in Collections:
COLLEGE OF SCIENCE AND CONVERGENCE TECHNOLOGY[E](과학기술융합대학) > APPLIED PHYSICS(응용물리학과) > Articles
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