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ICP-RIE 기술을 이용한 차압형 가스유량센서 제작

Title
ICP-RIE 기술을 이용한 차압형 가스유량센서 제작
Other Titles
Fabrication of a Pressure Difference Type Gas Flow Sensor using ICP-RIE Technology
Author
안강호
Keywords
Flow sensor; Diaphragm; Orifice; Piezoresistor; Deep RIE; SOI; Etch-stop
Issue Date
2008-12
Publisher
한국반도체디스플레이기술학회
Citation
반도체디스플레이기술학회지, v. 7, No. 1, Page. 1-5
Abstract
In this paper, we fabricated pressure difference type gas flow sensor using only dry etching technology by ICP-RIE(inductive coupled plasma reactive ion etching). The sensors structure consists of a common shear stress type piezoresistive pressure sensor with an orifice fabricated in the middle of the sensor diaphragm. Generally, structure like diaphragm is fabricated by wet etching technology using TMAH, but we fabricated diaphragm by only dry etching using ICP-RIE. To equalize the thickness of diaphragm we applied insulator(SiO₂) layer of SOI(Si/SiO₂/Si-sub) wafer as delay layer of dry etching. Size of fabricated diaphragm is 100010007㎛³ and overall chip 3000×3000㎛². We measured the variation of output voltage toward the change of gas pressure to analyze characteristics of the fabricated sensor. Sensitivity of fabricated sensor was relatively high as about 1.5mV/V·kPa at 1kPa full-scale. Nonlinearity was below 0.5%F.S. Over-pressure range of the fabricated sensor is 100kPa or more.
URI
http://www.ndsl.kr/ndsl/search/detail/article/articleSearchResultDetail.do?cn=JAKO200822034013800&SITE=CLICKhttp://repository.hanyang.ac.kr/handle/20.500.11754/105237
ISSN
1738-2270
Appears in Collections:
COLLEGE OF ENGINEERING SCIENCES[E](공학대학) > MECHANICAL ENGINEERING(기계공학과) > Articles
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