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Thickness-dependent structure and properties of SnS2 thin films prepared by atomic layer deposition

Title
Thickness-dependent structure and properties of SnS2 thin films prepared by atomic layer deposition
Author
전형탁
Issue Date
2017-01
Publisher
IOP PUBLISHING LTD
Citation
JAPANESE JOURNAL OF APPLIED PHYSICS, v. 56, no. 3, Article no.031201
Abstract
Tin disulfide (SnS2) thin films were deposited by a thermal atomic layer deposition (ALD) method at low temperatures. The physical, chemical, and electrical characteristics of SnS2 were investigated as a function of the film thickness. SnS2 exhibited a (001) hexagonal plane peak at 14.9 degrees in the X-ray diffraction (XRD) results and an A(1g) peak at 311 cm(-1) in the Raman spectra. These results demonstrate that SnS2 thin films grown at 150 degrees C showed a crystalline phase at film thicknesses above 11.2nm. The crystallinity of the SnS2 thin films was evaluated by a transmission electron microscope (TEM). The X-ray photoelectron spectroscopy (XPS) analysis revealed that SnS2 consisted of Sn4+ and S2- valence states. Both the optical band gap and the transmittance of SnS2 decreased as the film thickness increased. The band gap of SnS2 decreased from 3.0 to 2.4 eV and the transmittance decreased from 85 to 32% at a wavelength of 400nm. In addition, the resistivity of the thin film SnS2 decreased from 1011 to 106 Omega center dot cm as the film thickness increased. (C) 2017 The Japan Society of Applied Physics.
URI
https://iopscience.iop.org/article/10.7567/JJAP.56.031201/metahttp://repository.hanyang.ac.kr/handle/20.500.11754/105166
ISSN
0021-4922; 1347-4065
DOI
10.7567/JJAP.56.031201
Appears in Collections:
COLLEGE OF ENGINEERING[S](공과대학) > MATERIALS SCIENCE AND ENGINEERING(신소재공학부) > Articles
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