Full metadata record
DC Field | Value | Language |
---|---|---|
dc.contributor.author | 박진성 | - |
dc.date.accessioned | 2019-05-21T04:32:50Z | - |
dc.date.available | 2019-05-21T04:32:50Z | - |
dc.date.issued | 2017-01 | - |
dc.identifier.citation | JOURNAL OF VACUUM SCIENCE & TECHNOLOGY B, v. 35, no.2, Article no. 021202 | en_US |
dc.identifier.issn | 1071-1023 | - |
dc.identifier.uri | https://avs.scitation.org/doi/abs/10.1116/1.4974925 | - |
dc.identifier.uri | https://repository.hanyang.ac.kr/handle/20.500.11754/105145 | - |
dc.description.abstract | The effect of nitrogen incorporation in Ge-Ga-In-O (GGIO) semiconductors was investigated with respect to persistent photoconduction (PPC) and the associated thin-film transistor stability under negative bias illumination stress (NBIS). As the nitrogen partial pressure [pN(2) - N-2/(Ar + O-2 + N-2)] was increased from 0% to 40% during the reactive sputter growth of GGIO layers, the PPC phenomenon became less pronounced and higher device stability under NBIS was observed. X-ray photoelectron spectroscopy analyses suggest that the concentration of light-sensitive oxygen vacant sites in the GGIO semiconductors decreases as a result of nitrogen incorporation, hence the reduced PPC and higher device stability under NBIS. (C) 2017 American Vacuum Society. | en_US |
dc.description.sponsorship | This research was supported by the MOTIE (Ministry of Trade, Industry and Energy Project No. 10051403 and 10052020) and KDRC (Korea Display Research Corporation), and partially done by the Industry Technology R&D program of MOTIE/KEIT (10051080, Development of mechanical UI device core technology for small and medium-sized flexible display). | en_US |
dc.language.iso | en | en_US |
dc.publisher | A V S AMER INST PHYSICS | en_US |
dc.title | Reduction of persistent photoconduction in Ge-Ga-In-O semiconductors by the incorporation of nitrogen | en_US |
dc.type | Article | en_US |
dc.relation.no | 2 | - |
dc.relation.volume | 35 | - |
dc.identifier.doi | 10.1116/1.4974925 | - |
dc.relation.page | 1-5 | - |
dc.relation.journal | JOURNAL OF VACUUM SCIENCE & TECHNOLOGY B | - |
dc.contributor.googleauthor | Lee, Hyun-Mo | - |
dc.contributor.googleauthor | Ok, Kyung-Chul | - |
dc.contributor.googleauthor | Jeong, Hyun-Jun | - |
dc.contributor.googleauthor | Park, Jin-Seong | - |
dc.contributor.googleauthor | Lim, Junhyung | - |
dc.contributor.googleauthor | Park, Jozeph | - |
dc.relation.code | 2017001566 | - |
dc.sector.campus | S | - |
dc.sector.daehak | COLLEGE OF ENGINEERING[S] | - |
dc.sector.department | DIVISION OF MATERIALS SCIENCE AND ENGINEERING | - |
dc.identifier.pid | jsparklime | - |
Items in DSpace are protected by copyright, with all rights reserved, unless otherwise indicated.