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Reduction of persistent photoconduction in Ge-Ga-In-O semiconductors by the incorporation of nitrogen

Title
Reduction of persistent photoconduction in Ge-Ga-In-O semiconductors by the incorporation of nitrogen
Author
박진성
Issue Date
2017-01
Publisher
A V S AMER INST PHYSICS
Citation
JOURNAL OF VACUUM SCIENCE & TECHNOLOGY B, v. 35, no.2, Article no. 021202
Abstract
The effect of nitrogen incorporation in Ge-Ga-In-O (GGIO) semiconductors was investigated with respect to persistent photoconduction (PPC) and the associated thin-film transistor stability under negative bias illumination stress (NBIS). As the nitrogen partial pressure [pN(2) - N-2/(Ar + O-2 + N-2)] was increased from 0% to 40% during the reactive sputter growth of GGIO layers, the PPC phenomenon became less pronounced and higher device stability under NBIS was observed. X-ray photoelectron spectroscopy analyses suggest that the concentration of light-sensitive oxygen vacant sites in the GGIO semiconductors decreases as a result of nitrogen incorporation, hence the reduced PPC and higher device stability under NBIS. (C) 2017 American Vacuum Society.
URI
https://avs.scitation.org/doi/abs/10.1116/1.4974925http://repository.hanyang.ac.kr/handle/20.500.11754/105145
ISSN
1071-1023
DOI
10.1116/1.4974925
Appears in Collections:
COLLEGE OF ENGINEERING[S](공과대학) > MATERIALS SCIENCE AND ENGINEERING(신소재공학부) > Articles
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