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Write current reduction in transition metal oxide based resistance change memory

Title
Write current reduction in transition metal oxide based resistance change memory
Author
강보수
Keywords
FILMS; PERMITTIVITY; POLARIZATION; SRTIO3; MRAM
Issue Date
2008-03
Publisher
WILEY-V C H VERLAG GMBH
Citation
ADVANCED MATERIALS, v. 20, No. 5, Page. 924-+
Abstract
A novel memory cell structure with a Pt/Ti-doped NiO/Pt architecture is shown to exhibit the lowest write current reported thus far for a unipolar switching resistance-change-based device, as shown in the figure. The write current decreases dramatically upon scaling to cell sizes smaller than 100 nm x 100 nm. High-density universal memory can be fabricated by combining this node element with a selective switch.
URI
https://onlinelibrary.wiley.com/doi/abs/10.1002/adma.200702081?http://repository.hanyang.ac.kr/handle/20.500.11754/104402
ISSN
0935-9648
DOI
10.1002/adma.200702081
Appears in Collections:
COLLEGE OF SCIENCE AND CONVERGENCE TECHNOLOGY[E](과학기술융합대학) > APPLIED PHYSICS(응용물리학과) > Articles
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